ultra-fast avalanche sinterglass diode SF4001, sf4002, sf4003, sf 4004, sf4005, sf 4006, sf4007 vishay semiconductors document number: 86060 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.8, 04-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 87 mechanical data case: sod-57 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 369 mg features ? glass passivated ? hermetically sealed axial leaded glass envelope ? low reverse current ? high reverse voltage ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? switched mode power supplies ? high-frequency inverter circuits 949539 parts table part type differe ntiation package SF4001 v r = 50 v; i fav = 1 a sod-57 sf4002 v r = 100 v; i fav = 1 a sod-57 sf4003 v r = 200 v; i fav = 1 a sod-57 sf4004 v r = 400 v; i fav = 1 a sod-57 sf4005 v r = 600 v; i fav = 1 a sod-57 sf4006 v r = 800 v; i fav = 1 a sod-57 sf4007 v r = 1000 v; i fav = 1 a sod-57 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit reverse voltage = repetitive peak reverse voltage see electrical characteristics SF4001 v r = v rrm 50 v sf4002 v r = v rrm 100 v sf4003 v r = v rrm 200 v sf4004 v r = v rrm 400 v sf4005 v r = v rrm 600 v sf4006 v r = v rrm 800 v sf4007 v r = v rrm 1000 v peak forward surge current t p = 10 ms, half sine wave i fsm 30 a average forward current lead length l = 10 mm i fav 1a junction and storage temperature range t j = t stg - 55 to + 175 c non repetitive reverse avalanche energy i (br)r = 0.4 a e r 10 mj
SF4001, sf4002, sf4003, sf40 04, sf4005, sf4006, sf4007 vishay semiconductors ultra-fast avalanche sinterglass diode www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86060 88 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.8, 04-aug-10 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - max. thermal resistance vs. lead length fig. 2 - max. average forward current vs. ambient temperature maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 45 k/w on pc board with spacing 25 mm r thja 100 k/w electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit forward voltage i f = 1 a SF4001 v f --1v sf4002 v f --1v sf4003 v f --1v sf4004 v f --1v sf4005 v f --1.7v sf4006 v f --1.7v sf4007 v f --1.7v reverse current v r = v rrm i r --5a v r = v rrm , t j = 125 c i r - - 50 a reverse breakdown voltage i r = 100 a SF4001 v (br)r 50 - - v sf4002 v (br)r 100 - - v sf4003 v (br)r 200 - - v sf4004 v (br)r 400 - - v sf4005 v (br)r 600 - - v sf4006 v (br)r 800 - - v sf4007 v (br)r 1000 - - v reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a SF4001 t rr - - 50 ns sf4002 t rr - - 50 ns sf4003 t rr - - 50 ns sf4004 t rr - - 50 ns sf4005 t rr - - 75 ns sf4006 t rr - - 75 ns sf4007 t rr - - 75 ns 0 20 40 80 60 100 120 15 10 5 0 202530 r thja - ther. re s i s t. junction/ambient (k/w) l - lead length (mm) 949552 ll t l = con s tant 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 160 180 t amb - ambient temperature (c) 96 12130 i fav - average forward current (a) v r = v rrm f 1 khz r thja 100 k/w pc board s f4001 to s f4004
SF4001, sf4002, sf4003, sf 4004, sf4005, sf 4006, sf4007 ultra-fast avalanche sinterglass diode vishay semiconductors document number: 86060 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.8, 04-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 89 fig. 3 - max. average forward current vs. ambient temperature fig. 4 - max. average forward current vs. ambient temperature fig. 5 - max. average forward current vs. ambient temperature fig. 6 - max. forward current vs. forward voltage fig. 7 - max. forward current vs. forward voltage fig. 8 - max. reverse curre nt vs. junction temperature 96 12131 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 160 180 t amb - ambient temperature (c) i fav - average forward current (a) v r = v rrm f 1 khz r thja 100 k/w pc board s f4005 to s f4007 96 12052 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 160 180 t amb - ambient temperature (c) i fav - average forward current (a) v r = v rrm f 1 khz r thja 45 k/w l = 10 mm s f4001 to s f4004 96 12053 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 20 40 60 80 100 120 140 160 180 t amb - ambient temperature (c) i fav - average forward current (a) v r = v rrm f 1 khz r thja 45 k/w l = 10 mm s f4005 to s f4007 0.001 0.01 0.1 1 10 0.0 0.4 0.8 1.2 1.6 2.0 v f - forward voltage (v) 96 12048 i f - forward current (a) t j = 175 c s f4001 to s f4004 t j = 25 c 0.001 0.01 0.1 1 10 0.0 0.8 1.6 2.4 3.2 4.0 v f - forward voltage (v) 96 12050 i f - forward current (a) t j = 175 c s f4005 to s f4007 t j = 25 c 1 10 100 1000 25 50 75 100 125 150 175 t j - junction temperature (c) 96 12056 i r - rever s e current (a) s f4001 to s f4007 v r = v rrm
SF4001, sf4002, sf4003, sf40 04, sf4005, sf4006, sf4007 vishay semiconductors ultra-fast avalanche sinterglass diode www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86060 90 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.8, 04-aug-10 fig. 9 - max. reverse power dissipation vs. junction temperature fig. 10 - diode capacitance vs. reverse voltage package dimensions in millimeters (inches): sod-57 0 50 100 150 200 250 300 350 400 450 500 25 50 75 100 125 150 175 t j - junction temperature (c) 16476 v r = v rrm p r - rever s e power di ss ipation (mw) s f4004 s f4004 s f4007 p r - limit at 100 % v r s f4007 p r - limit at 80 % v r p r - limit at 100 % v r p r - limit at 80 % v r 0 5 10 15 20 25 30 35 40 45 50 0.1 1 10 100 v r - rever s e voltage (v) 16477 c d - diode capacitance (pf) f = 1 mhz s f4004 s f4007 20543 3.6 (0.142) max. 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 0.82 (0.032) max.
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